Condições de crescimento dos filmes de diamante dopado com boro para aplicação na área de eletroquímica

Abstract

This work focused on conducting a comprehensive literature review on the growth conditions of boron-doped diamond (BDD), consulting renowned databases such as ScienceDirect, Scopus, and Web of Science, where a total of 8.559 articles related to the topic were identified. The main goal was to understand the complexity and advances associated with the process of doping diamonds with boron, a technique that presents a series of challenges and variables, such as boron concentration, temperature, growth pressure, and its applications in electrochemistry. The results highlight significant progress in the chemical vapor deposition (CVD) method for the growth of BDD. It was observed that precision in temperature control (700oC to 1200oC) and pressure (27 to 270 kPa) during the CVD process is crucial for the quality of the diamond produced. These electrodes are particularly useful for water treatment and purification, demonstrating the ability to efficiently degrade organic pollutants. Optimizing the boron doping concentration, ranging between 500 and 10.000 ppm, is fundamental to maximize the desired properties and adapt the electrodes for different industrial and environmental applications. The conducted analysis emphasizes the importance of continuing to explore and optimize BDD growth techniques, as well as deepening the understanding of doping mechanisms and expanding the practical applications of doped diamonds.